Tuesday, 24 April 2018

Getting electrons to move in a semiconductor

Researchers have shown that a wide-bandgap semiconductor called gallium oxide can be engineered into nanometer-scale structures that allow electrons to move much faster within the crystal structure. With electrons that move with such ease, Ga2O3 could be a promising material for applications such as high-frequency communication systems and energy-efficient power electronics.

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New microscope reveals heat flow in materials for green energy

Scientists have developed a new microscope that significantly improves the way heat flow in materials can be measured. This advancement coul...