Monday, 13 July 2020
Magnetic memory states go exponential
Researchers showed that relatively simple structures can support exponential number of magnetic states -- much greater than previously thought -- and demonstrated switching between the states by generating spin currents. The ability to stabilize and control exponential number of discrete magnetic states in a relatively simple structure constitutes a major contribution to spintronics and may pave the way to multi-level magnetic memory with extremely large number of states per cell, be used for neuromorphic computing, and more.
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