Semiconductor doping and electronic devices: Heating gallium nitride and magnesium forms superlattice

A study revealed that a simple thermal reaction of gallium nitride with metallic magnesium results in the formation of a distinctive superlattice structure. This represents the first time researchers have identified the insertion of 2D metal layers into a bulk semiconductor. By carefully observing materials through various cutting-edge characterization techniques, the researchers uncovered new insights into the process of semiconductor doping and elastic strain engineering.