Breakthrough in semiconductor patterning: New block copolymer achieves 7.6 nm line width

A recently developed block copolymer could help push the limits of integration and miniaturization in semiconductor manufacturing, report scientists. Chemically tailored for reliable directed self-assembly, the proposed compound can arrange itself into perpendicular lamellar structures whose half-pitch width is less than 10 nanometers, outperforming conventional and widely used block copolymers.