Friday, 27 October 2017

Deep-depletion: A new concept for MOSFETs

Diamond is largely recognized as the ideal material in wide bandgap development, but realizing its full potential in field-effect transistors has been challenging. Researchers incorporate a new approach by using the deep-depletion regime of bulk-boron-doped diamond MOSFETs.

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Forgotten property of the electron

The orbital angular momentum of electrons has long been considered a minor physical phenomenon, suppressed in most crystals and largely over...