Thursday, 9 November 2017

The next generation of power electronics? Gallium nitride doped with beryllium

Physicists have made a breakthrough in revising methods largely discarded 15 years ago. They have discovered a microscopic mechanism that will allow gallium nitride semiconductors to be used in electronic devices that distribute large amounts of electric power.

No comments:

Post a Comment

Physicists develop new method to visualize magnetic nanostructures with high resolution

A new method enables researchers to analyse magnetic nanostructures with a high resolution. The new method achieves a resolution of around 7...