Wednesday, 4 April 2018

High-speed and on-silicon-chip graphene blackbody emitters

High-speed light emitters integrated on silicon chips can enable novel architectures for silicon-based optoelectronics. However, compound-semiconductor-based light emitters face major challenges for their integration with a silicon-based platform because of their difficulty of direct fabrication on a silicon substrate. Here, high-speed, highly-integrated graphene-based on-silicon-chip blackbody emitters in the near-infrared (NIR) region including telecommunication wavelength were developed.
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