Friday 17 May 2019
Ultra-clean fabrication platform produces nearly ideal 2D transistors
Columbia Engineering researchers report that they have demonstrated a nearly ideal transistor made from a 2D material stack -- with only a two-atom-thick semiconducting layer -- by developing a completely clean and damage-free fabrication process. Their method shows vastly improved performance compared to 2D semiconductors fabricated with a conventional process, and could provide a scalable platform for creating ultra-clean devices in the future.
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