Tuesday, 27 August 2019
Energy-efficient power electronics: Gallium oxide power transistors with record values
Engineers have now achieved a breakthrough with transistors based on gallium oxide (beta-Ga2O3). The newly developed beta-Ga2O3-MOSFETs (metal-oxide-semiconductor field-effect transistor) provide a high breakdown voltage combined with high current conductivity. With a breakdown voltage of 1.8 kilovolts and a record power figure of merit of 155 megawatts per square centimeter, they achieve unique performance figures close to the theoretical material limit of gallium oxide.
Subscribe to:
Post Comments (Atom)
-
In this project, we will learn about the MCP2515 CAN Controller Module, how to interface the MCP2515 CAN Bus Controller with Arduino and fin...
-
Interfacing DC motor to the microcontroller is a very important concept in many industrial and robotic applications. By interfacing DC motor...
-
Smart LCD with Automatic Brightness Adjusting Using Arduino and LDR Sensor Here is a simple Arduino project that focuses on adjusting the b...
No comments:
Post a Comment