Thursday, 26 December 2019

Paving the way for spintronic RAMs: A deeper look into a powerful spin phenomenon

Scientists explore a new material combination that sets the stage for magnetic random access memories, which rely on spin -- an intrinsic property of electrons -- and could outperform current storage devices. Their breakthrough presents a novel strategy to exploit spin-related phenomena in topological materials, which could spur several advances in the field of spin electronics. Moreover, this study provides additional insight into the underlying mechanism of spin-related phenomena.
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