Wednesday, 22 January 2020

Designer-defect clamping of ferroelectric domain walls for more-stable nanoelectronics

Engineered defects in ferroelectric materials provides key to improved polariaztion stability, a significant step forward for domain-wall nanoelectronics in data storage. Researchers achieved stability greater than one year (a 2000% improvement).

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Harnessing electromagnetic waves and quantum materials to improve wireless communication technologies

A team of researchers has developed innovative methods to enhance frequency conversion of terahertz (THz) waves in graphene-based structures...