Wednesday, 22 January 2020

Designer-defect clamping of ferroelectric domain walls for more-stable nanoelectronics

Engineered defects in ferroelectric materials provides key to improved polariaztion stability, a significant step forward for domain-wall nanoelectronics in data storage. Researchers achieved stability greater than one year (a 2000% improvement).

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Smart textiles and surfaces: How lightweight elastomer films are bringing tech to life

Clothes that can mimic the feeling of being touched, touch displays that provide haptic feedback to users, or even ultralight loudspeakers. ...