Development of a diamond transistor with high hole mobility

Using a new fabrication technique, engineers have developed a diamond field-effect transistor (FET) with high hole mobility, which allows reduced conduction loss and higher operational speed. This new FET also exhibits normally-off behavior (i.e., electric current flow through the transistor ceases when no gate voltage is applied, a feature that makes electronic devices safer). These results may facilitate the development of low-loss power conversion and high-speed communications devices.