Friday, 18 March 2022

Making memory serve correctly: Fixing an inherent problem in next-generation magnetic RAM

SOT-RAM, a promising type of next-generation magnetic memory, could pave the way to ultra-low-power electronics. However, scientists have identified a source of disturbance during the read operation in SOT-RAMs that compromises their reliability. Fortunately, they also found a method to greatly reduce this disturbance by slightly modifying the SOT-RAM structure. Their findings will help make this type of memory faster and more reliable, helping its commercialization for sustainable IoT applications.

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Smart textiles and surfaces: How lightweight elastomer films are bringing tech to life

Clothes that can mimic the feeling of being touched, touch displays that provide haptic feedback to users, or even ultralight loudspeakers. ...