Friday, 18 March 2022
Making memory serve correctly: Fixing an inherent problem in next-generation magnetic RAM
SOT-RAM, a promising type of next-generation magnetic memory, could pave the way to ultra-low-power electronics. However, scientists have identified a source of disturbance during the read operation in SOT-RAMs that compromises their reliability. Fortunately, they also found a method to greatly reduce this disturbance by slightly modifying the SOT-RAM structure. Their findings will help make this type of memory faster and more reliable, helping its commercialization for sustainable IoT applications.
Subscribe to:
Post Comments (Atom)
-
In this project, we will learn about the MCP2515 CAN Controller Module, how to interface the MCP2515 CAN Bus Controller with Arduino and fin...
-
Do you need a MOSFET gate resistor? What value should it be? And should it go before or after the pulldown resistor? If you’re a bit impati...
-
Interfacing DC motor to the microcontroller is a very important concept in many industrial and robotic applications. By interfacing DC motor...
No comments:
Post a Comment