Potential application of unwanted electronic noise in semiconductors

Random telegraph noise (RTN) in semiconductors is typically caused by two-state defects. Two-dimensional (2D) van der Waals (vdW) layered magnetic materials are expected to exhibit large fluctuations due to long-range Coulomb interaction; importantly, which could be controlled by a voltage compared to 3D counterparts having large charge screening. Researchers reported electrically tunable magnetic fluctuations and RTN signal in multilayered vanadium-doped tungsten diselenide (WSe2) by using vertical magnetic tunneling junction devices. They identified bistable magnetic states in the 1/f2 RTNs in noise spectroscopy, which can be further utilized for switching devices via voltage polarity.